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PDF LP1500SOT2233 Data sheet ( Hoja de datos )
| Número de pieza | LP1500SOT2233 | |
| Descripción | Low Noise/ High Linearity Packaged PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LP1500SOT2233 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Filtronic
Solid State
LP1500SOT223
Low Noise, High Linearity Packaged PHEMT
FEATURES
• +27 dBm Typical Power at 1800 MHz
• 15 dB Typical Power Gain at 1800 MHz
• 1.0 dB Typical Noise Figure
• +42 dBm Typical Intercept Point
• Color-coded by IDSS range
GATE
SOURCE
DRAIN
SOURCE
DESCRIPTION AND APPLICATIONS
(TOP VIEW)
The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm
Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1500 also
features Si3N4 passivation and is available in a die form or in a flanged ceramic package (P100) for high-power
applications, or in the SOT-89 plastic package.
Typical applications include PCS/Cellular low-voltage high-efficiency output amplifiers, and general purpose power
amplifiers. The LP 1500 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade.
PERFORMANCE SPECIFICATIONS (TA = 25°C)
SYMBOLS
IDSS
P1dB
G1dB
NF
IP3
IMAX
GM
VP
IGSO
BVGS
BVGD
PARAMETERS
Saturated Drain-Source Current
LP1500-SOT223-1 BLUE
VDS = 2V VGS = 0V
LP1500-SOT223-2 GREEN
LP1500-SOT223-3 RED
Output Power at 1dB Gain Compression
VDS = 3.3V, IDS = 33% IDSS
f = 1800 Mhz
Power Gain at 1dB Gain Compression
VDS = 3.3V, IDS = 33% IDSS
f = 1800 MHz
Noise Figure VDS = 3.3V, IDS = 33% IDSS, f = 1.8 GHz
Output Intercept Point VDS = 3.3V, IDS = 33% IDSS, f = 1.8 GHz
Maximum Drain-Source Current
VDS = 2V VGS = +1V
Transconductance
VDS = 2V VGS = 0V
Pinch-Off Voltage
VDS = 2V IDS = 5mA
Gate-Source Leakage Current
VGS = -3V
Gate-Source Breakdown Voltage
IGS = 8mA
Gate-Drain Breakdown Voltage
IGD = 8mA
MIN TYP MAX UNITS
375 420 450 mA
451 490 526
527 560 600
25.0 27.0
dBm
13.5 15.0
dB
1.0 dB
42 dBm
925 mA
300 400
mS
-0.25 -1.2 -2.0 V
10 75 µA
-8 -10
V
-8 -11
V
DSS-026 WF
Phone: (408) 988-1845
Internet: http://www.filtronicsolidstate.com
Fax: (408) 970-9950
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet LP1500SOT2233.PDF ] | |
Hoja de datos destacado
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| LP1500SOT2232 | Low Noise/ High Linearity Packaged PHEMT | Filtronic Compound Semiconductors |
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