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PDF LP1500 Data sheet ( Hoja de datos )
| Número de pieza | LP1500 | |
| Descripción | 1W POWER PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LP1500 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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• FEATURES
♦ 31.5 dBm Output Power at 1-dB Compression at 18 GHz
♦ 8 dB Power Gain at 18 GHz
♦ 28 dBm Output Power at 1-dB Compression at 3.3V
♦ 45dBm Output IP3 at 18GHz
♦ 50% Power-Added Efficiency
DRAIN
BOND
PAD (2X)
SOURCE
BOND
PAD (2x)
GATE
BOND
PAD (2X)
LP1500
1W POWER PHEMT
• DESCRIPTION AND APPLICATIONS
DIE SIZE: 16.5X16.1 mils (420x410 µm)
DIE THICKNESS: 3 mils (75 µm)
BONDING PADS: 1.9X2.4 mils (50x60 µm)
The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for reliable high-power applications. The LP1500 also features Si3N4 passivation
and is available in a P100 flanged ceramic package and in the low cost plastic SOT89 package.
Typical applications include commercial and other narrowband and broadband high-performance
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Output Third Intercept Point
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Thermal Resistivity
frequency=18 GHz
Symbol
IDSS
P-1dB
G-1dB
IP3
PAE
IMAX
GM
IGSO
VP
|VBDGS|
|VBDGD|
ΘJC
Test Conditions
VDS = 2 V; VGS = 0 V
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 2 V; VGS = 1 V
VDS = 2 V; VGS = 0 V
VGS = -5 V
VDS = 2 V; IDS = 5 mA
IGS = 8 mA
IGD = 8 mA
Min Typ Max Units
375 490 600 mA
30 31.5
dBm
68
dB
45 dBm
50 %
925 mA
385 450
mS
10 75 µA
-0.25 -1.2 -2.0
V
-12 -15
V
-12 -16
V
45 °C/W
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/18/01
Email: [email protected]
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet LP1500.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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