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PDF MCK100-6A Data sheet ( Hoja de datos )
| Número de pieza | MCK100-6A | |
| Descripción | Standard Gate SCR | |
| Fabricantes | DnI | |
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Sensitive Gate
Silicon Controlled -
Rectifiers
Symbol
2. Anode
Features
Repetitive Peak Off-State Voltage : 400V
R.M.S On-State Current ( IT(RMS)= 0.8 A )
Low On-State Voltage (1.2V(Typ.)@ ITM)
Available with tape & reel
1.Cathode
3.Gate
General Description
Sensitive-gate triggering thyristor is suitable for the applica-
tion where gate current limited such as small motor control,
gate driver for large thyristor, sensing and detecting circuits.
MCK100-6
BVDRM = 600V
IT(RMS) = 0.8 A
ITSM = 10 A
SOT- 89
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
sine wave,50 to 60Hz,gate open
half sine wave : TC = 112 °C
180° Conduction Angle
1/2 Cycle, 60Hz, sine wave
non-repetitive , t = 8.3ms
t = 8.3ms
PGM
PG(AV)
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
TA = 25 °C, pulse width 1.0
TA = 25 °C, t = 8.3ms
IFGM
Forward Peak Gate Current
TA = 25 °C, pulse width 1.0
VRGM
TJ
TSTG
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TA = 25 °C, pulse width 1.0
Ratings
400
0.5
0.8
10
0.415
2
0.1
1
5.0
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
W
W
A
V
°C
°C
April, 2005. Rev.0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
1/5
1 page  
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SOT- 89 Package Dimension
Dim.
mm
Min. Typ.
A 1.40
B 0.36
B1 0.32
C 0.35
C1 0.35
D 4.40
D1 1.40
E 2.30
e 1.50
e1 2.90
H 3.94
L 0.90
R 0.25
MCK100-6
Max.
1.60
0.56
0.52
0.44
0.44
4.60
1.80
2.60
3.10
4.25
1.10
Min.
0.055
0.014
0.013
0.014
0.014
0.173
0.055
0.091
0.114
0.155
0.035
Inch
Typ.
0.060
0.010
Max.
0.063
0.022
0.020
0.017
0.017
0.181
0.071
0.102
0.122
0.167
0.043
1
2
3
1. Cathode
2. Anode
3. Gate
5/5
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