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PDF SGB02N60 Data sheet ( Hoja de datos )
| Número de pieza | SGB02N60 | |
| Descripción | FAST IGBT IN NPT TECHNOLOGY | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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SGP02N60,
SGB02N60
SGD02N60
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
P-TO-252-3-1 (D-PAK) P-TO-220-3-1
(TO-252AA)
(TO-220AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
SGP02N60
SGB02N60
SGD02N60
VCE IC VCE(sat) Tj Package
Ordering Code
600V 2A
2.2V
150°C TO-220AB
Q67040-S4504
TO-263AB
Q67040-S4505
TO-252AA(DPAK) Q67041-A4707
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 2 A, VCC = 50 V, RGE = 25 Ω ,
start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Value
600
6.0
2.9
12
12
±20
13
Unit
V
A
V
mJ
10
30
-55...+150
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Jul-02
1 page  
www.DataSheet4U.com
SGP02N60,
SGB02N60
SGD02N60
7A
6A
5A VGE=20V
15V
4A 13V
11V
3A 9V
7V
2A 5V
1A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
7A
6A
5A
VGE=20V
4A 15V
13V
3A 11V
9V
2A 7V
5V
1A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
8A
7A Tj=+25°C
-55°C
6A +150°C
5A
4A
3A
2A
1A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
4.0V
3.5V
3.0V
IC = 4A
2.5V
2.0V
IC = 2A
1.5V
1.0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5 Jul-02
5 Page 
www.DataSheet4U.com
SGP02N60,
SGB02N60
SGD02N60
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
an d Stray capacity Cσ =180pF.
11 Jul-02
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SGB02N60.PDF ] | |
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