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Número de pieza | BTA201W | |
Descripción | 1 A Three-quadrant triacs high commutation | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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BTA201W series E
1 A Three-quadrant triacs high commutation
Rev. 02 — 17 September 2007
Product data sheet
1. Product profile
1.1 General description
Passivated guaranteed commutation triacs in a surface-mounted plastic package,
intended for interfacing with low-power drivers, including microcontrollers.
1.2 Features
I Suitable for interfacing with low-power I SOT223 surface mounted
drivers, including microcontrollers
1.3 Applications
I Motor control
I Solenoid drivers
1.4 Quick reference data
I ITSM ≤ 12.5 A
I VDRM ≤ 600 V (BTA201W-600E)
I VDRM ≤ 800 V (BTA201W-800E)
I IT(RMS) ≤ 1 A
I IGT ≤ 10 mA
2. Pinning information
Table 1.
Pin
1
2
3
4
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
main terminal 2 (T2)
Simplified outline
4
123
SOT223
Symbol
T2
sym051
T1
G
1 page NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
5. Thermal characteristics
Table 4. Thermal characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
Rth(j-sp)
thermal resistance from see Figure 6
junction to solder point
- - 15 K/W
Rth(j-a)
thermal resistance from
junction to ambient
minimum footprint; see Figure 14
for pad area; see Figure 15
[1] -
[1] -
156 -
70 -
K/W
K/W
[1] Mounted on a printed-circuit board.
102
Zth(j-sp)
(K/W)
10
001aag969
(1)
1 (2)
10−1
P
10−2
10−5
10−4
10−3
10−2
10−1
tp
1
tp (s)
(1) Unidirectional
(2) Bidirectional
Fig 6. Transient thermal impedance from junction to solder point as a function of pulse width
t
10
BTA201W_SER_E_2
Product data sheet
Rev. 02 — 17 September 2007
© NXP B.V. 2007. All rights reserved.
5 of 13
5 Page NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
10. Revision history
Table 7. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
BTA201W_SER_E_2
Modifications:
20070917
Product data sheet
-
BTA201W_SER_E_1
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Descriptive titles have been corrected.
• Table 3 “Limiting values” on page 2: dIT/dt uprated
• Table 6 “Dynamic characteristics” on page 7: dVD/dt uprated
• Figure 12 “Critical rate of rise of off-state voltage as a function of junction temperature;
minimum values” on page 8: graph updated
BTA201W_SER_E_1
20060207
Product data sheet
-
-
BTA201W_SER_E_2
Product data sheet
Rev. 02 — 17 September 2007
© NXP B.V. 2007. All rights reserved.
11 of 13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet BTA201W.PDF ] |
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