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PDF APTGT100H120G Data sheet ( Hoja de datos )
| Número de pieza | APTGT100H120G | |
| Descripción | IGBT Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APTGT100H120G
Full - Bridge
Fast Trench + Field Stop IGBT®
Power Module
VCES = 1200V
IC = 100A @ Tc = 80°C
Q1
G1
VBUS
Q3
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
G3 • Motor control
E1 OUT1 OUT2
Q2
G2
Q4
E2
0/VBUS
G1 VBUS
E1
E3
G3
OUT1
0/VBUS
OUT2
E3 Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
G4 - Switching frequency up to 20 kHz
- Soft recovery parallel diodes
E4
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
G2 Benefits
E2 • Stable temperature behavior
• Very rugged
E4
G4
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
140
100
200
±20
480
200A @ 1100V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGT100H120G
Operating Frequency vs Collector Current
60
50
40 ZVS
ZCS
30
VCE=600V
D=50%
RG=3.9 Ω
TJ=125°C
Tc=75°C
20
10 Hard
switching
0
0 20
40
60 80 100 120 140
IC (A)
Forward Characteristic of diode
200
TJ=25°C
150
100 TJ=125°C
50 TJ=125°C
0
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.9 Diode
0.4
0.7
0.3 0.5
0.2 0.3
0.1 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT100H120G.PDF ] | |
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