|
|
PDF APTGT100DU120TG Data sheet ( Hoja de datos )
| Número de pieza | APTGT100DU120TG | |
| Descripción | IGBT Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de APTGT100DU120TG (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
APTGT100DU120TG
Dual common source
Fast Trench + Field Stop IGBT®
Power Module
VCES = 1200V
IC = 100A @ Tc = 80°C
G1
E1
NTC1
C1
Q1
C2
Q2
E
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
G2
Features
E2 • Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
NTC2
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
G2
E2
C1 E
C2
C2
E1 E2 NTC2
G1 G2 NTC1
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
140
100
200
±20
480
200A @ 1100V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGT100DU120TG
Operating Frequency vs Collector Current
60
50
40 ZVS
ZCS
30
VCE=600V
D=50%
RG=3.9 Ω
TJ=125°C
Tc=75°C
20
10 Hard
switching
0
0 20
40
60 80 100 120 140
IC (A)
Forward Characteristic of diode
200
TJ=25°C
150
100 TJ=125°C
50 TJ=125°C
0
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.9 Diode
0.4
0.7
0.3 0.5
0.2 0.3
0.1 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT100DU120TG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| APTGT100DU120T | IGBT Power Module | Advanced Power Technology |
| APTGT100DU120TG | IGBT Power Module | Advanced Power Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |