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Número de pieza | APTGT100DA60TG | |
Descripción | IGBT Power Module | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
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APTGT100DA60TG
Boost chopper
Trench + Field Stop IGBT®
Power Module
VB US SENS E
VBUS
NT C2
CR1
Q2
G2
E2
0/VBU S
OUT
NT C1
VBUS
VBUS
SENSE
G2
E2
0/VBUS
E2
G2
OUT
OUT
NTC2
NTC1
VCES = 600V
IC = 100A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
150
100
200
±20
340
200A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page APTGT100DA60TG
Operating Frequency vs Collector Current
120
100
80 ZCS
VCE=300V
D=50%
RG=3.3Ω
TJ =150°C
ZVS Tc=85°C
60
40
Hard
20 switching
0
0 25 50 75 100 125 150
IC (A)
200
175
150
125
100
75
50
25
0
0
Forward Characteristic of diode
TJ=125°C
TJ =150°C
TJ= 25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
0.7 0.9
Diode
0.6 0.7
0.5
0.5
0.4
0.3 0.3
0.2
0.1
0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet APTGT100DA60TG.PDF ] |
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APTGT100DA60TG | IGBT Power Module | Advanced Power Technology |
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