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Número de pieza | MAS3795 | |
Descripción | Silicon epitaxial planar type | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
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MAS3795
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
• High-density mounting is possible
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• Low forward voltage VF optimum for low voltage rectification
VF = < 0.3 V (at IF = 1 mA)
• SSS-Mini type 3-pin package
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
VR
VRM
IF
IFM
Tj
Tstg
30
30
30
150
125
−55 to +125
Unit
V
V
mA
mA
°C
°C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
Unit: mm
0.10+–00..0025
1: Anode
2: N.C.
3: Cathode
SSSMini3-F1 Package
Marking Symbol: M2
Internal Connection
3
■ Electrical Characteristics Ta = 25°C ± 3°C
12
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
Detection efficiency
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
η Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
30
0.3
1.0
1.5
1.0
65
µA
V
pF
ns
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Publication date: June 2002
SKH00117AED
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MAS3795.PDF ] |
Número de pieza | Descripción | Fabricantes |
MAS3795 | Silicon epitaxial planar type | Panasonic Semiconductor |
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