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Número de pieza | MS1642P | |
Descripción | RF & MICROWAVE TRANSISTORS | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
VHF, UHF GENERAL PURPOSE
Features
• 400 MHz
• GOLD METALLIZATION
• POUT = 10 W MINIMUM
• GP = 12 dB MINIMUM
• INFINITE VSWR CAPABILITY
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1642 is a gold metallized silicon NPN transistor
designed for general purpose amplifier applications in
the VHF and UHF frequency bands. Diffused emitter
ballast resistors and computer controlled wirebonding
techniques ensure maximum device reliability and
consistency.
MS1642P
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
PDISS
IC(max)
TSTG
VCBO
VCEO
VEBO
Parameter
Power Dissipation*
Device Current*
Storage Temperature
Collector – Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
*Applies only to rated RF amplifier operation
Value
27
1.5
-65 to +150
60
33
4.0
6.4
Unit
W
A
ºC
V
V
V
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MS1642P.PDF ] |
Número de pieza | Descripción | Fabricantes |
MS1642P | RF & MICROWAVE TRANSISTORS | Advanced Power Technology |
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