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PDF CM1600HC-34H Data sheet ( Hoja de datos )
| Número de pieza | CM1600HC-34H | |
| Descripción | HIGH POWER SWITCHING USE INSULATED TYPE | |
| Fabricantes | Mitsubishi Electric | |
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MITSUBISHI HVIGBT MODULES
CM1600HC-34H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1600HC-34H
q IC ................................................................ 1600A
q VCES ....................................................... 1700V
q Insulated Type
q 1-element in a Pack
q AISiC Baseplate
q Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
130
114
57±0.25
CC
CM E
E
E
C
G
3 - M4 NUTS
16.5
2.5
18.5
screwing depth
min. 7.7
18
61.5
4 - M8 NUTS
CC
C
G
E
EE
CIRCUIT DIAGRAM
6 - φ 7 MOUNTING HOLES
screwing depth
min. 11.7
11
14.5
5
35
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
1 page  
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1600HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
103
7 VGE = 0V, Tj = 25°C
5 f = 100kHz
3
2 Cies
102
7
5
3
2
Coes
101
7
5 Cres
3
2
10100-1 2 3 5 7100 2 3 5 7101 2 3 5 7102
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 850V, IC = 1600A
Tj = 25°C
16
12
8
4
0
0 4 8 12 16 20
GATE CHARGE (µC)
2000
1600
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, VGE = ±15V
RG(on) = RG(off) = 1.6Ω
Tj = 125°C, Inductive load
Eon
1200
800
Eoff
400
0
0
Erec
800
1600
2400
COLLECTOR CURRENT (A)
3200
2400
2000
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, IC = 1600A
VGE = ±15V
Tj = 125°C, Inductive load
Eon
1600
1200
Eoff
800
400
0
0
Erec
2 4 6 8 10 12
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CM1600HC-34H.PDF ] | |
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