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PDF CM1200HC-50H Data sheet ( Hoja de datos )

Número de pieza CM1200HC-50H
Descripción HIGH POWER SWITCHING USE INSULATED TYPE
Fabricantes Mitsubishi Electric 
Logotipo Mitsubishi Electric Logotipo



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MITSUBISHI HVIGBT MODULES
CM1200HC-50H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200HC-50H
q IC ................................................................ 1200A
q VCES ....................................................... 2500V
q Insulated Type
q 1-element in a Pack
q AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.1
190 ±0.5
171±0.1
57±0.1
57±0.1
6 - M8 NUTS
C
CCC
C CC
G
E
EEE
CM E
CEG
E
3 - M4 NUTS
screwing depth
min. 7.7
79.4 ±0.3
20.25 ±0.2
41.25 ±0.3
61.5 ±0.3
61.5 ±0.3
13 ±0.2
E CIRCUIT DIAGRAM
8 - φ7±0.1 MOUNTING HOLES
screwing depth
min. 16.5
5.2 ±0.2
40 ±0.3
15 ±0.2
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005

1 page




CM1200HC-50H pdf
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HC-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
103
7 VGE = 0V, Tj = 25°C
5 f = 100kHz
3
2 Cies
102
7
5
3
2
Coes
101
7
5 Cres
3
2
10100-1 2 3 5 7100 2 3 5 7101 2 3 5 7102
COLLECTOR-EMITTER VOLTAGE (V)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
3
VCC = 1250V, VGE = ±15V
RG(on) = RG(off) = 1.6
2.5 Tj = 125°C, Inductive load
Eon
2
Eoff
1.5
1
Erec
0.5
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 1250V, IC = 1200A
Tj = 25°C
16
12
8
4
0
0 3 6 9 12
GATE CHARGE (µC)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
6
VCC = 1250V, IC = 1200A
VGE = ±15V
5 Tj = 125°C, Inductive load
Eon
4
3
2
Eoff
1
Erec
0
0 5 10 15 20
GATE RESISTANCE ()
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005

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