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PDF CM100RL-12NF Data sheet ( Hoja de datos )
| Número de pieza | CM100RL-12NF | |
| Descripción | HIGH POWER SWITCHING USE | |
| Fabricantes | Mitsubishi Electric | |
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CM100RL-12NF
MITSUBISHI IGBT MODULES
CM100RL-12NF
HIGH POWER SWITCHING USE
¡IC ................................................................... 100A
¡VCES ............................................................ 600V
¡Insulated Type
¡7-elements in a pack
APPLICATION
AC drive inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
11
7
13.62
40.78
120
106 ±0.5
17
17
2-φ5.5
MOUNTING HOLES
6-M5 NUTS
10.75
(19.75)
AB
B U VW
12
22
12
23
12
23
12
23
Housing Type of A and B
(J.S.T.Mfg.Co.Ltd)
A = B8P-VH-FB-B, B = B2P-VH-FB-B
P
B
CN-7
CN-8
N
UP-1
UP-2
U
CN-5
CN-6
VP-1
VP-2
V
CN-3
CN-4
WP-1
WP-2
W
CN-1
CN-2
CIRCUIT DIAGRAM
Jun. 2004
1 page  
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
2
102
7
5
3
2
101101
23
trr
Irr
5 7 102
Conditions:
VCC = 300V
VGE = ±15V
RG = 6.3Ω
Tj = 25°C
Inductive load
2 3 5 7 103
EMITTER CURRENT IE (A)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
101
7 Conditions:
VCC = 300V
5 VGE = ±15V
3 RG = 6.3Ω
Tj = 125°C
2 Inductive load
C snubber at bus
100
7 Esw(off)
5
3 Esw(on)
2
10–11 00 2 3 5 7 101 2 3 5 7 102
COLLECTOR CURRENT IC (A)
RECOVERY LOSS vs. IE
(TYPICAL)
100
7
5
3
Err
2
10–1
7
5
Conditions:
VCC = 300V
VGE = ±15V
3 RG = 6.3Ω
2
Tj = 125°C
Inductive load
C snubber at bus
10–12 00 2 3 5 7 101
23
5 7 102
EMITTER CURRENT IE (A)
MITSUBISHI IGBT MODULES
CM100RL-12NF
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
100
7 Single Pulse,
5 TC = 25°C
3 Under the chip
2
10–1
7
5
10–1
7
5
33
22
IGBT part:
10–2 Per unit base =
7
5
Rth(j–c) = 0.23°C/W
3
2
FWDi part:
Per unit base =
Rth(j–c) = 0.41°C/W
10–2
7
5
3
2
10–3
10–3
10–52 3 5 710–42 3 5 710–3
TIME (s)
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
102
Conditions:
7 VCC = 300V
5 VGE = ±15V
3 IC = 100A
Tj = 125°C
2 Inductive load
C snubber at bus
101
7
5 Esw(off)
3
2
100
100
Esw(on)
2 3 5 7 101
2 3 5 7 102
GATE RESISTANCE RG (Ω)
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
100
7 Err
5
3
2
10–1
7
5
Conditions:
VCC = 300V
VGE = ±15V
3 IE = 100A
Tj = 125°C
2 Inductive load
C snubber at bus
10–12 00 2 3 5 7 101
23
5 7 102
GATE RESISTANCE RG (Ω)
Jun. 2004
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CM100RL-12NF.PDF ] | |
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