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PDF LNCQ03PS Data sheet ( Hoja de datos )

Número de pieza LNCQ03PS
Descripción Red Light Semiconductor Laser
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! LNCQ03PS Hoja de datos, Descripción, Manual

Semiconductor Laser
LNCQ03PS
Red Light Semiconductor Laser
For optical control systems
Features
High output operations with oscillatins wavelength of 660nm : 35mw
Low threshold current
Stable single horizontal mode osillation
Space saved by miniaturization
Low astigmatic difference facilitates good concentrated light spot,
production.
Applications
DVD-Ram
Pointer
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Radiant power
Reverse voltage
Laser
PIN
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings
PO 35
VR 1.5
VR (PIN)
Pd (PIN)
Topr
Tstg
30
60
–10 to +60
– 40 to +85
Unit
mW
V
V
mW
˚C
˚C
1.0±0.1
ø5.6
+0
–0.025
ø4.4
ø3.55±0.1
Unit : mm
2
Reference slot
ø1.0 min.
PD LD
31
Junction plane
Reference plane
Reference plane
3-ø0.45
1
ø2.0
3
2
Bottom view
1: LD Anode
2: Common Case
3: PD Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Threshold current
Ith CW
20
Operating current
IOP CW PO = 30mW
50
Operating voltage
VOP CW PO = 30mW
2.0
Resistance between electrodes RS CW PO = 30mW
Oscillation wavelength
λL CW PO = 30mW
3.0
635
Slope efficiency
Horizontal direction
Radiation angle
Vertical direction
Optical axis
accuracy
X direction
Y direction
Astigmatic difference
SE
θ//
θ
θX
θY
As*2
CW PO = 30mW
CW PO = 30mW
CW PO = 30mW
CW PO = 30mW
CW PO = 4mW
CW PO = 4mW
0.5
7.5
17
–2.0
–3.0
*1 θ// and θare the angles where the optical intencity is a half of its max. value.( half full angle )
*2 Reference to package axis.
*3 Guaranteed value in design.
typ
50
95
2.5
5.0
660
0.7
8.5
22
5.0
max Unit
70 mA
120 mA
3.0 V
10
675 nm
1.1 W/A
10.5 deg.
26.5 deg.
+2.0 deg.
+3.0 deg.
10 µm
1

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