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Número de pieza | LNA4801L | |
Descripción | GaAlAs Infrared Light Emitting Diode | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LNA4801L (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Infrared Light Emitting Diodes
LNA4801L
GaAlAs Infrared Light Emitting Diode
For optical control systems
Features
Fast response and high-speed modulation capability :
fC = 20 MHz (typ.)
Wide directivity : θ = 22 deg. (typ.)
Transparent epoxy resin package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* f = 100Hz, Duty cycle = 0.1 %
Symbol Ratings
PD 190
IF 100
IFP* 1
VR 3
Topr –25 to +85
Tstg –30 to +100
Unit
mW
mA
A
V
˚C
˚C
ø3.8±0.2
ø3.0±0.2
Unit : mm
2-0.8 max.
2-0.5±0.1
0.5±0.1
2.54
12
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ
Center radiant intensity
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Half-power angle
Ie IF = 50mA
λP IF = 50mA
∆λ IF = 50mA
VF IF = 100mA
IR VR = 3V
θ The angle in which radiant intencity is 50%
12
860
40
1.6
22
Cutoff frequency
fC* IFP = 50mA + 10mAp-p
20
* Frequency when modulation optical power decreases by 3dB from 1MHz 10 log PO(fCMHz) = – 3
( )PO(1MHz)
max
1.9
10
Unit
mW/sr
nm
nm
V
µA
deg.
MHz
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet LNA4801L.PDF ] |
Número de pieza | Descripción | Fabricantes |
LNA4801L | GaAlAs Infrared Light Emitting Diode | Panasonic Semiconductor |
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