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Número de pieza | LNA2603F | |
Descripción | GaAs Infrared Light Emitting Diode | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LNA2603F (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Infrared Light Emitting Diodes
LNA2603F
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : PO = 6 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :
λP = 940 nm (typ.)
Long lifetime, high reliability
Thin side-view type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* f = 100 Hz, Duty cycle = 0.1 %
Symbol Ratings
PD 160
IF 100
IFP* 1.5
VR 3
Topr –25 to +85
Tstg – 40 to +100
Unit
mW
mA
A
V
˚C
˚C
4.5±0.15
3.5±0.15
Unit : mm
2.1±0.15
1.6±0.15
0.8±0.1
2-1.2±0.3 0.45±0.15
2-0.45±0.15
1 2.54 2
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
Fall time
Half-power angle
Symbol
PO
λP
∆λ
VF
IR
Ct
tr
tf
θ
Conditions
IF = 50mA
IF = 50mA
IF = 50mA
IF = 100mA
VR = 3V
VR = 0V, f = 1MHz
IFP = 100mA
The angle in which radiant intencity is 50%
min typ max Unit
36
mW
940 nm
50 nm
1.3 1.6
V
10 µA
45 pF
1 µs
1 µs
80 deg.
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet LNA2603F.PDF ] |
Número de pieza | Descripción | Fabricantes |
LNA2603F | GaAs Infrared Light Emitting Diode | Panasonic Semiconductor |
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