(PDF) SIGC25T120CL Datasheet

Número de pieza	SIGC25T120CL
Descripción	IGBT Chip
Fabricantes	Infineon Technologies
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No Preview Available ! www.DataSheet4U.com IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Preliminary SIGC25T120CL This chip is used for: • power module BSM15GD120DLC E3224 Applications: • drives C G E Chip Type SIGC25T120CL VCE ICn Die Size 1200V 15A 5.71 x 4.53 mm2 Package Ordering Code sawn on foil Q67041- A4704-A003 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 5.71 x 4.53 mm2 2 x ( 2.18 x 1.6 ) 1.09 x 0.68 25.9 / 18.7 180 µm 150 mm 270 grd 555 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month Edited by INFINEON Technologies AI PS DD HV3, L 7141-P, Edition 1, 24.01.02 1 page

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PDF SIGC25T120CL Data sheet ( Hoja de datos )