(PDF) SIGC158T170R3 Datasheet

Número de pieza	SIGC158T170R3
Descripción	IGBT Chip
Fabricantes	Infineon Technologies
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No Preview Available ! www.DataSheet4U.com Preliminary IGBT3 Chip SIGC158T170R3 FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • power module Applications: • drives C G E Chip Type SIGC158T170R3 VCE ICn Die Size Package Ordering Code 1700V 125A 12.57 x 12.57 mm2 sawn on foil Q67050- A4227-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 12.57 x 12.57 4 x ( 5.05 x 2.32 ) 4 x ( 5.05 x 2.54 ) 1.12 x 1.12 158 / 124.8 mm mm2 190 µm 150 mm 90 grd 86 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 7801A, Edition 1, 02.06.2003 8:30 1 page

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PDF SIGC158T170R3 Data sheet ( Hoja de datos )