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PDF RQM2201DNS Data sheet ( Hoja de datos )
| Número de pieza | RQM2201DNS | |
| Descripción | Silicon N Channel MOS FET Power Switching | |
| Fabricantes | Renesas Technology | |
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RQM2201DNS
Silicon N Channel MOS FET
Power Switching
Features
• Small, thin and leadless type package (3 × 3 mm, t = 0.8 mm max.)
• Two FET chips are mounted in one package
• High density mounting
• High speed switching. (Ciss = 200 pF typ)
• VDSS ≥ 60 V and capable of 2.5 V gate drive
Outline
REJ03G1492-0200
Rev.2.00
Apr 16, 2007
RENESAS Package code: PWSN0006ZA-A
(Package name: WSON0303-6 <HWSON-6>)
14
56
4 32 1
(Bottom view)
FET No.1
(Nch)
6
D
2
G
FET No.2
(Nch)
5
D
4
G
1, 3: Source
2, 4: Gate
5, 6: Drain
Notes:
SS
13
1. Marking is “M2201“.
2. The following maximum ratings and electric characteristics are applied to both FET1 and
FET2.
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel dissipation
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Pch Note3
60
±12
2
8
2
1
1.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
3. 2 Drive operation: When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
REJ03G1492-0200 Rev.2.00 Apr 16, 2007
Page 1 of 7
1 page  
RQM2201DNS
Dynamic Input Characteristics
80
ID = 2.0 A
16
60 12
VDD = 10 V
40 25 V
50 V
8
20 4
VDD = 50 V
25 V
10 V
0
0 1234 5
Gate Charge Qg (nc)
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss1
100
Coss
10 Crss
VGS = 0 V
f = 1 MHz
1
0 10 20 30 40 50 60
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
10
8
6
4.5 V
4 2.5 V
2
VGS = 0 V
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
1000
Switching Characteristics
VGS = 4.5 V, VDD = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
100 tf
td(off)
td(on)
10
tr
1
0.01
0.1 1
Drain Current ID (A)
10
Input Capacitance vs.
Gate to Source Voltage
450
400
350
300
250
VDS = 0 V
f = 1 MHz
200
–10 –8 –6 –4 –2 0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.7
VGS = 0
0.6
0.5
ID = 10 mA
0.4
0.3
1 mA
0.2
0.1
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1492-0200 Rev.2.00 Apr 16, 2007
Page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RQM2201DNS.PDF ] | |
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