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PDF STN5PF02V Data sheet ( Hoja de datos )
| Número de pieza | STN5PF02V | |
| Descripción | P-channel MOSFET | |
| Fabricantes | STMicroelectronics | |
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STN5PF02V
P-channel 20V - 0.065Ω - 4.2A - SOT-223
2.5V - Drive STripFET™ II Power MOSFET
General features
Type
STN5PF02V
VDSS
20V
RDS(on)
<0.080Ω
ID
4.2A
■ Ultra low threshold gate drive (2.5V)
■ Standard outline for easy automated surface
mount assembly
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size™”
strip-based process. The resulting transistor
shows extremely extremely low on-resistance
when driven at 2.5V.
Applications
■ Switching application
2
3
2
1
SOT-223
Internal schematic diagram
Order codes
Part number
STN5PF02V
Marking
N5PF02V
Package
SOT-223
Packaging
Tape & reel
August 2006
Rev 3
1/12
www.st.com
12
1 page  
STN5PF02V
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 10V, ID = 2.1A
RG = 4.7Ω , VGS = 2.5V
(see Figure 12)
Min Typ. Max Unit
11 ns
47 ns
38 ns
20 ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 4.2A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.2A, di/dt=100A/µs,
VDD = 16V, Tj = 150°C
(see Figure 14)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
4.2 A
17 A
1.2 V
32 ns
12.8 nC
0.8 A
5/12
5 Page 
STN5PF02V
5 Revision history
Table 7. Revision history
Date
Revision
20-Jun-2005
1 First release
13-Dec-2005
2 Final version
04-Aug-2006
3 New template
Revision history
Changes
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STN5PF02V.PDF ] | |
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