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PDF STN3NF06 Data sheet ( Hoja de datos )
| Número de pieza | STN3NF06 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
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STN3NF06
N-CHANNEL 60V - 0.07Ω - 4A SOT-223
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STN3NF06
60 V
< 0.1 Ω
4A
s TYPICAL RDS(on) = 0.07 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s AVALANCHE RUGGED TECHNOLOGY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC-DC & DC-AC COVERTERS
s DC MOTOR CONTROL (DISK DRIVERS, etc.)
s SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
December 2002
.
Value
60
60
± 20
4
2.9
16
3.3
0.026
10
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 150
°C
(1) ISD ≤4A, di/dt ≤150A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 4A, VDD = 30V
1/8
1 page  
Normalized Gate Threshold Voltage vs Temperature
STN3NF06
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
..
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STN3NF06.PDF ] | |
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