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PDF STN3NE06 Data sheet ( Hoja de datos )
| Número de pieza | STN3NE06 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
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® STN3NE06
N - CHANNEL 60V - 0.08Ω - 3A - SOT-223
STripFET™ POWER MOSFET
TYPE
ST N3NE06
VDSS
60 V
RDS(on)
< 0.100 Ω
ID
3A
s TYPICAL RDS(on) = 0.08 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™ ” stip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
V D GR
V GS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Pto t Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tst g St orage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
New RDS (on) spec. starting from JULY 98
August 1998
Va l u e
Unit
60 V
60 V
± 20
V
3A
1.8 A
12 A
2 .5
0.02
W
W/oC
6 V/ns
-65 to 150
oC
150 oC
(1) ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
1 page  
Capacitance Variations
STN3NE06
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Cross-over Time
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STN3NE06.PDF ] | |
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