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PDF TK2350 Data sheet ( Hoja de datos )
| Número de pieza | TK2350 | |
| Descripción | STEREO 300W (4 OHM ) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER | |
| Fabricantes | Tripath Technology | |
| Logotipo |  |
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Tripath Technology, Inc. - Technical Information
TK2350
STEREO 300W (4Ω) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER
USING DIGITAL POWER PROCESSINGTM TECHNOLOGY
Technical Information
Revision 1.5 – September 2003
GENERAL DESCRIPTION
The TK2350 (TC2001/TP2350B chipset) is a two-channel, 300W (4Ω) per channel Amplifier Driver that uses
Tripath’s proprietary Digital Power Processing (DPPTM) technology. Class-T amplifiers offer both the audio
fidelity of Class-AB and the power efficiency of Class-D amplifiers.
Applications
Audio/Video Amplifiers & Receivers
Pro-audio Amplifiers
Automobile Power Amplifiers
Subwoofer Amplifiers
Benefits
Reduced system cost with smaller/less
expensive power supply and heat sink
Signal fidelity equal to high quality Class-AB
amplifiers
High dynamic range compatible with digital
media such as CD and DVD
Features
Class-T architecture
Pin compatible with Tripath TK2150
Proprietary Digital Power Processing technology
“Audiophile” Sound Quality
0.02% THD+N @ 50W, 8Ω
0.03% IHF-IM @ 30W, 8Ω
High Efficiency
95% @ 150W @ 8Ω
90% @ 275W @ 4Ω
Supports wide range of output power levels
Up to 300W/channel (4Ω), single-ended
outputs
Up to 1000W (4Ω), bridged outputs
Output over-current protection
Over- and under-voltage protection
Over-temperature protection
Typical Performance for TK2350
10
f = 1kHz
5 BBM = 80nS
BW = 22Hz - 22kHz
2
1
0.5
0.2
0.1
0.05
0.02
0.01
1
2
THD+N versus Output Power versus Supply Voltage
RL = 4Ω
39V 45V 54V
5 10 20
50 100 200
Output Power (W)
500
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TK2350, Rev 1.5/09.03
1 page  
Tripath Technology, Inc. - Technical Information
Electrical Characteristics TK2350 (Note 14)
TA = 25 °C. See Application/Test Circuit on page 7. Unless otherwise noted, the supply voltage is
VPP=|VNN|=45V.
SYMBOL
PARAMETER
Iq Quiescent Current
(No load, BBM0=1,BBM1=0,
Mute = 0V)
IMUTE
Mute Supply Current
(No load, Mute = 5V)
CONDITIONS
VPP = +45V
VNN = -45V (using external VN10)
VNN = -45V (using SMPSO pin to
drive IRF9510 for generating VN10)
VN10 = 10V
VPP = +45V
VNN = -45V
VN10 = 10V
MIN.
TYP.
90
90
TBD
200
1
1
1
MAX.
UNITS
mA
mA
mA
TBD
mA
mA
mA
mA
Note 14: Minimum and maximum limits are guaranteed but may not be 100% tested.
Performance Characteristics TK2350 – Single Ended
TA = 25 °C. Unless otherwise noted, the supply voltage is VPP=|VNN|=45V, the input frequency is 1kHz and the
measurement bandwidth is 20kHz. See Application/Test Circuit.
SYMBOL
PARAMETER
POUT
Output Power
(continuous Power/Channel)
THD + N
IHF-IM
Total Harmonic Distortion Plus
Noise
IHF Intermodulation Distortion
SNR
Signal-to-Noise Ratio
CS Channel Separation
η Power Efficiency
AV Amplifier Gain
AVERROR Channel to Channel Gain Error
eNOUT
VOFFSET
Output Noise Voltage
Output Offset Voltage
CONDITIONS
THD+N = 0.1%, RL = 8Ω
RL = 4Ω
THD+N = 1%, RL = 8Ω
RL = 4Ω
POUT = 50W/Channel, RL = 8Ω
19kHz, 20kHz, 1:1 (IHF), RL = 8Ω
POUT = 30W/Channel
A Weighted, RL = 4Ω,
POUT = 275W/Channel
0dBr = 30W, RL = 8Ω, f = 1kHz
POUT = 150W/Channel, RL = 8Ω
POUT = 10W/Channel, RL = 4Ω
See Application / Test Circuit
POUT = 10W/Channel, RL = 4Ω
See Application / Test Circuit
A Weighted, no signal, input shorted,
DC offset nulled to zero
No Load, Mute = Logic Low
0.1% RFBA, RFBB, RFBC resistors
MIN.
-1.0
TYP.
100
190
120
220
0.02
0.03
102
97
95
10.7
260
MAX.
UNITS
W
W
W
W
%
%
dB
dB
%
V/V
0.5 dB
µV
1.0 V
5 of 5
TK2350, Rev 1.5/09.03
5 Page 
Tripath Technology, Inc. - Technical Information
External Components Description (Refer to the Application/Test Circuit)
Components
RI
RF
CI
RFBA
RFBB
RFBC
CFB
ROFA
ROFB
RREF
CA
DB
CB
CBAUX
RB
CS
RVNN1
Description
Inverting input resistance to provide AC gain in conjunction with RF. This input is
biased at the BIASCAP voltage (approximately 2.5VDC).
Feedback resistor to set AC gain in conjunction with RI. Please refer to the Amplifier
Gain paragraph, in the Application Information section.
AC input coupling capacitor which, in conjunction with RI, forms a highpass filter at
fC = 1 (2πRICI) .
Feedback divider resistor connected to V5. This resistor is normally set at 1kΩ.
Feedback divider resistor connected to AGND. This value of this resistor depends
on the supply voltage setting and helps set the TK2350 gain in conjunction with RI,
RF, RFBA, and RFBC. Please see the Modulator Feedback Design paragraphs in the
Application Information Section.
Feedback resistor connected from either the OUT1(OUT2) to FBKOUT1(FBKOUT2)
or speaker ground to FBKGND1(FBKGND2). The value of this resistor depends on
the supply voltage setting and helps set the TK2350 gain in conjunction with RI, RF,
RFBA,, and RFBB. It should be noted that the resistor from OUT1(OUT2) to
FBKOUT1(FBKOUT2) must have a power rating of greater than PDISS = VPP2 (2RFBC) .
Please see the Modulator Feedback Design paragraphs in the Application
Information Section.
Feedback delay capacitor that both lowers the idle switching frequency and filters
very high frequency noise from the feedback signal, which improves amplifier
performance. The value of CFB should be offset between channel 1 and channel 2
so that the idle switching difference is greater than 40kHz. Please refer to the
Application / Test Circuit.
Potentiometer used to manually trim the DC offset on the output of the TK2350.
Resistor that limits the manual DC offset trim range and allows for more precise
adjustment.
Bias resistor. Locate close to pin 15 of the TC2001 and ground at pin 20 of the
TC2001.
BIASCAP decoupling capacitor. Should be located close to pin 1 of the TC2001 and
grounded at pin 20 of the TC2001.
Bootstrap diode. This diode charges up the bootstrap capacitors when the output is
low (at VNN) to drive the high side gate circuitry. A fast or ultra fast recovery diode
is recommended for the bootstrap circuitry. In addition, the bootstrap diode must be
able to sustain the entire VPP-VNN voltage. Thus, for most applications, a 150V (or
greater) diode should be used.
High frequency bootstrap capacitor, which filters the high side gate drive supply.
This capacitor must be located as close to VBOOT1 (pin 57 of the TP2350B) or
VBOOT2 (pin 27 of the TP2350B) for reliable operation. The “negative” side of CB
should be connected directly to the HO1COM (pin 47 of the TP2350B) or HO2COM
(pin 37 of the TP2350B). Please refer to the Application / Test Circuit.
Bulk bootstrap capacitor that supplements CB during “clipping” events, which result
in a reduction in the average switching frequency.
Bootstrap resistor that limits CBAUX charging current during TK2350 power up
(bootstrap supply charging).
Supply decoupling for the power supply pins. For optimum performance, these
components should be located close to the TC2001 and TP2350B and returned to
their respective ground as shown in the Application/Test Circuit.
Main overvoltage and undervoltage sense resistor for the negative supply (VNN).
Please refer to the Electrical Characteristics Section for the trip points as well as the
hysteresis band. Also, please refer to the Over / Under-voltage Protection section in
the Application Information for a detailed discussion of the internal circuit operation
and external component selection.
11 of 11
TK2350, Rev 1.5/09.03
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet TK2350.PDF ] | |
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