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PDF ST3413 Data sheet ( Hoja de datos )
| Número de pieza | ST3413 | |
| Descripción | P Channel Enhancement Mode MOSFET | |
| Fabricantes | Stanson Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ST3413 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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P Channel Enhancement Mode MOSFET
-3.4A
ST3413
DESCRIPTION
The ST3413 is the P-Channel logic enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits where high-side
switching, and low in-line power loss are needed in a very small outline surface mount
package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
12
1.Gate 2.Source 3.Drain
3
13YA
FEATURE
z -20V/-3.4A, RDS(ON) = 95m-ohm
@VGS = -4.5V
z -20V/-2.4A, RDS(ON) = 120m-ohm
@VGS = -2.5V
z 20V/-1.7A, RDS(ON) = 145m-ohm
@VGS = -1.8V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and
maximum DC current capability
z SOT-23-3L package design
12
1A: Part Marking Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 1
1 page  
P Channel Enhancement Mode MOSFET ST3413
-3.4A
TYPICAL CHARACTERICTICS (25 Unless noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Psge 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ST3413.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ST3413 | P Channel Enhancement Mode MOSFET | Stanson Technology |
| ST3413A | P Channel Enhancement Mode MOSFET | Stanson Technology |
| ST3414 | N Channel Enhancement Mode MOSFET | Stanson Technology |
| ST3414A | N Channel Enhancement Mode MOSFET | Stanson Technology |
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