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Número de pieza | LPS200P70 | |
Descripción | PACKAGED LOW NOISE PHEMT | |
Fabricantes | Filtronic Compound Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LPS200P70 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! • FEATURES
♦ 0.7 dB Noise Figure at 12 GHz
♦ 12 dB Associated Gain at 12 GHz
♦ 0.6 dB Noise Figure at 2 GHz
♦ 14 dB Associated Gain at 2 GHz
♦ Low DC Power Consumption
LPS200P70
PACKAGED LOW NOISE PHEMT
• DESCRIPTION AND APPLICATIONS
The LPS200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an
Electron-Beam direct-write 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom”
Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure
and processing have been optimized for high dynamic range. The LPS200’s active areas are
passivated with Si3N4, and the P70 ceramic package is ideal for low-cost, high-performance
applications that require a surface-mount package.
Typical applications include low noise receiver preamplifiers for commercial applications including
Cellular/PCS systems and broad band commercial instrumentation.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C*
Parameter
Symbol
Test Conditions
Saturated Drain-Source Current** IDSS
VDS = 2 V; VGS = 0 V
Noise Figure
Associated Gain at minimum NF
Transconductance
NF
GA
GM
VDS = 2 V; IDS = 25% IDSS
VDS = 2 V; IDS = 25% IDSS
VDS = 2 V; VGS = 0 V
Gate-Source Leakage Current
IGSO
VGS = -3 V
Pinch-Off Voltage
VP VDS = 2 V; IDS = 1 mA
*frequency=12 GHz, unless otherwise noted
**Formerly binned as: LPS200P70-1 = 15-30 mA and LPS200P70–2 = 31-50 mA
Min Typ Max Units
15 50 mA
0.7 1.3 dB
10.5 12
dB
60 80
mS
1 15 µA
-0.25 -0.8 -1.5
V
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/20/01
Email: [email protected]
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet LPS200P70.PDF ] |
Número de pieza | Descripción | Fabricantes |
LPS200P70 | PACKAGED LOW NOISE PHEMT | Filtronic Compound Semiconductors |
LPS200P70 | PACKAGED LOW NOISE PHEMT | Filtronic Compound Semiconductors |
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