|
|
PDF IRFP4242PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFP4242PBF | |
| Descripción | PDP SWITCH | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRFP4242PBF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
PDP MOSFET
PD - 96966A
IRFP4242PbF
Features
l Advanced process technology
l Key parameters optimized for PDP Sustain &
Energy Recovery applications
l Low EPULSE rating to reduce the power
dissipation in Sustain & ER applications
l Low QG for fast response
l High repetitive peak current capability for
reliable operation
l Short fall & rise times for fast switching
l175°C operating junction temperature for
improved ruggedness
l Repetitive avalanche capability for robustness
and reliability
Key Parameters
VDS min
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100°C
TJ max
300
360
49
93
175
DD
V
V
m:
A
°C
G
S
S
D
G
TO-247AC
GDS
Description
G ate
D rain
Source
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
fRθJC Junction-to-Case
Max.
±30
46
33
190
93
430
210
2.9
-40 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
Max.
0.35
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes through
are on page 8
www.irf.com
1
7/25/05
1 page  
600
ID = 33A
500
400
300
200
TJ = 125°C
100 TJ = 25°C
0
4.0
6.0 8.0 10.0 12.0 14.0
VGS, Gate-to-Source Voltage (V)
16.0
Fig 13. On-Resistance Vs. Gate Voltage
5.0
4.5
4.0
ID = 250µA
3.5
3.0
2.5
2.0
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 15. Threshold Voltage vs. Temperature
1
IRFP4242PbF
3000
2500
2000
ID
TOP 4.9A
6.3A
BOTTOM 33A
1500
1000
500
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Temperature
140
ton= 1µs
120
Duty cycle = 0.25
Half Sine Wave
Square Pulse
100
80
60
40
20
0
25
50 75 100 125 150
Case Temperature (°C)
175
Fig 16. Typical Repetitive peak Current vs.
Case temperature
D = 0.50
0.1
0.20
0.10
0.05
0.01 0.02
0.01
0.001
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
τCτ
Ri (°C/W) τi (sec)
0.1315 0.000555
0.2186 0.023373
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
www.irf.com
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFP4242PBF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFP4242PBF | PDP SWITCH | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |