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PDF MSM54V24632A Data sheet ( Hoja de datos )
| Número de pieza | MSM54V24632A | |
| Descripción | SGRAM | |
| Fabricantes | OKI electronic | |
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¡¡SemicondSucetormiconductor
MSM54V24632A
11 Feb. 1998
MSM54V24632A
131,072-Word ¥ 32-Bit ¥ 2-Bank SGRAM without Graphics Functions
DESCRIPTION
The MSM54V24632A is a synchronous graphics random access memory without graphics
oriented functions; Block Write, Write per bit, Single write and Burst stop. It is organized as 128K
words ¥ 32 bits ¥ 2 banks.
This device can operate up to 125MHz by using synchronous interface.
FEATURES
• 131,072-words ¥ 32 bits ¥ 2 banks memory
• Single 3.3 V±0.3 V power supply
• LVTTL compatible inputs and outputs
• All input signals are latched at rising edge of system clock
• Auto precharge and controlled precharge
• Internal pipelined operation: column address can be changed every clock cycle
• Dual internal banks controlled by A9 (Bank Address: BA)
• Independent byte operation via DQM0 to DQM3
• Simplified function (No Block write, Write per bit, Single write and Burst stop)
• Programmable burst sequence (Sequential / Interleave)
• Programmable burst length (1, 2, 4, 8 and full page)
• Programmable CAS latency (1, 2 and 3)
• Power Down operation and Clock Suspend operation
• Auto refresh and Self refresh capability
• 1,024 refresh cycle / 16 ms
• Package :
100-pin plastic QFP (QFP100-P-1420-0.65-BK4) (Product : MSM54V24632A-xxGS-BK4)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM54V24632A-8
MSM54V24632A-10
MSM54V24632A-12
Clock Frequency
MHz (Max.)
125
100
83
Package
100-pin Plastic QFP (14 ¥ 20 mm)
1
1 page  
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¡ Semiconductor
MSM54V24632A
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to VSS
VCC Supply Voltage
Storage Temperature
Power Dissipation
Short Circuit Current
Operating Temperature
Symbol
VIN, VOUT
VCC, VCCQ
Tstg
PD*
IOS
Topr
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
VCC, VCCQ
VIH
VIL
Capacitance
Parameter
Input Capacitance (A0 - A9)
Input Capacitance (CLK, CKE, CS,
RAS, CAS, WE, DQM0~DQM3)
Input/Output Capacitance
(DQ0 - DQ31)
Symbol
CIN1
CIN2
COUT
Rating
–0.5 to 4.6
–0.5 to 4.6
–55 to 150
1
50
0 to 70
(Voltages referenced to VSS)
Unit
V
V
°C
W
mA
°C
Min.
3.0
2.0
–0.3
Typ.
3.3
—
—
(Voltages referenced to VSS = 0 V)
Max.
Unit
3.6 V
VCC + 0.2
V
0.8 V
Typ.
—
—
—
(VCC = 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
Max.
Unit
5 pF
5 pF
7 pF
5
5 Page 
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¡ Semiconductor
MSM54V24632A
TIMING WAVEFORM
Read & Write Cycle (Same Bank) @ CAS Latency = 2, Burst Length = 4
CLK
,CKE
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
tRC
CS
tRP
RAS
CAS
ADDR
A9
A8
,,,,DQ
tRCD
Ra Ca0
Rb Cb0
Ra
tOH
Rb
Qa0 Qa1 Qa2 Qa3
Db0 Db1 Db2 Db3
tAC tOHZ
tWR
WE
DQM0
~DQM3
Row Active Read Command
Row Active Write Command
Precharge Command
Precharge Command
11
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| Páginas | Total 29 Páginas | |
| PDF Descargar | [ Datasheet MSM54V24632A.PDF ] | |
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