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Número de pieza | MC33460 | |
Descripción | (MC33460 / MC33461) Under Voltage Detector Series | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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MC33460, MC33461
Under Voltage Detector
Series
The MC33460 and MC33461 series are ultra–low power CMOS
under–voltage detectors with very tight threshold accuracy
specifically designed for accurate monitoring of power supplies. The
devices are optimized for use in battery powered systems where low
quiescent current and small packaging are required. The device
generates an active–low signal whenever the input voltage falls below
the factory set ±2% threshold. Hysteresis is provided to ensure reliable
output switching.
The MC33460/1 series features a highly accurate voltage reference,
a comparator with a precision voltage threshold, and built–in
hysteresis to prevent erratic operation and a choice of output
configurations between Open Drain (MC33460) and complementary
push–pull (MC33461). The products are offered in 9 standard voltage
thresholds ranging from 0.9V to 4.5V. Other threshold voltages from
1.0 to 5.0V are available in 100mV steps. The devices can operate to a
very low input voltage level and are housed in the ultra–miniature
SC–82AB package.
Features
• Available in Open Drain or Push–Pull Output
• Output State Guaranteed to Vin = 0.8 V
• Tight Detector Voltage Accuracy (±2.0%)
• Extended Temperature Operation (–40°C to 85°C)
• Ultra Low Quiescent Current (0.8 µA at Vin = 1.5 V typical)
• Wide Range of Operating Voltage (0.7 V to 10 V)
Applications
• Low Battery Detector
• Power–Fail Indicator
• Microprocessor Reset Generator
• Window Comparator
• Battery Backup Circuit
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4
1
SC–82AB
SQ SUFFIX
CASE 419C
PIN CONNECTIONS
OUT 1
4 GND
Vin 2
3 N/C
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Representative Block Diagrams
MC33460
Nch Open Drain Configuration
MC33461
CMOS Configuration
Vin
Vref
OUT
GND
Vin
Vref
OUT
GND
© Semiconductor Components Industries, LLC, 1999
November, 1999 – Rev. 2
1
Publication Order Number:
MC33460/D
1 page MC33460, MC33461
ELECTRICAL CHARACTERISTICS (For all values TA = 25°C, unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
MC33460/461 – 3.0
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁDetector Threshold (Vin Falling)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁDetector Threshold Hysteresis
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁSupply Current
VDET–
VHYS
2.94 3.00 3.06
0.09 0.15 0.21
V
V
(Vin = 2.87 V)
(Vin = 5.0 V)
Iin
– 1.0 3.0 µA
– 1.2 3.6
Maximum Operating Voltage
Vin(max)
–
– 10 V
Minimum Operating Voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁOutput Current (OUT)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁNch
Vin(min)
–
0.55 0.70
V
(–40°C≤TA≤85°C)
– 0.65 0.80
IOUT
(Vout = 0.05V, Vin = 0.70V)
0.01 0.05 – mA
CMOS Output High
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁOutput Delay Time (Note 1)
(Vout = 0.50V, Vin = 1.5V)
(Vout = 2.4V, Vin = 4.5V)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁDetector Threshold Temperature Coefficient
(–40°C≤TA≤85°C)
tpd
D VDET–/D T
1.0
1.0
–
–
2.0
2.0
–
±100
– mA
– mA
100 µs
– PPM/°C
NOTES: 1.Refer to Figure 1 for test conditions for measurement.
ELECTRICAL CHARACTERISTICS (For all values TA = 25°C, unless otherwise noted.)
Characteristic
MC33460/461 – 3.2
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁDetector Threshold (Vin Falling)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁDetector Threshold Hysteresis
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁSupply Current
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁMaximum Operating Voltage
Symbol
(Vin = 3.07 V)
(Vin = 5.2 V)
VDET–
VHYS
Iin
Vin(max)
Min
3.136
0.096
–
–
–
Typ
3.200
0.160
1.0
1.2
–
Max Unit
3.264
0.224
3.0
3.6
10
V
V
µA
V
Minimum Operating Voltage
Vin(min)
–
0.55 0.70
V
Output Current (OUT)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁNch
(–40°C≤TA≤85°C)
(Vout = 0.05V, Vin = 0.70V)
(Vout = 0.50V, Vin = 1.5V)
IOUT
– 0.65 0.80
0.01 0.05 – mA
1.0 2.0
– mA
CMOS Output High
Output Delay Time (Note 1)
(Vout = 2.4V, Vin = 4.5V)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁDetector Threshold Temperature Coefficient
(–40°C≤TA≤85°C)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁNOTES: 1.RefertoFigure1fortestconditionsformeasurement.
tpd
D VDET–/D T
1.0
–
–
2.0
–
±100
– mA
100 µs
– PPM/°C
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5
5 Page MC33460, MC33461
INFORMATION FOR USING THE SC–82AB SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.60 0.60
0.80
1.90
0.60 0.80
0.80
1.30
mm
SC–82AB
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet MC33460.PDF ] |
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