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PDF RTF011P02 Data sheet ( Hoja de datos )
| Número de pieza | RTF011P02 | |
| Descripción | Drive Pch MOS FET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RTF011P02 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Transistors
2.5V Drive Pch MOS FET
RTF011P02
RTF011P02
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance.
2) High speed switching.
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RTF011P02
Taping
TL
3000
zExternal dimensions (Unit : mm)
TUMT3
(1) Gate
(2) Source
(3) Drain
2.0
0.3
(3)
0.85Max.
0.77
0~0.1
(1) (2)
0.65 0.65
1.3
0.17
Abbreviated symbol : WW
zInner circuit
(3)
(1)
∗1
∗2
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−20
±12
±1
±4
−0.4
−4
0.8
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ∗
Limits
156
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
(1) Gate
(2) Source
(3) Drain
1/2
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet RTF011P02.PDF ] | |
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