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PDF NESG2031M16 Data sheet ( Hoja de datos )

Número de pieza NESG2031M16
Descripción HIGH FREQUENCY TRANSISTOR
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NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG2031M16
FEATURES
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
LOW NOISE FIGURE:
NF = 0.8 dBm at 2 GHz
NF = 1.3 dBm at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 21.5 dB at 2 GHz
LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
M16
DESCRIPTION
NEC's NESG2031M16 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
NESG2031M16
M16
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP MAX
NF
Ga
NF
Ga
MSG
|S21E|2
P1dB
OIP3
fT
Cre
ICBO
IEBO
hFE
Noise Figure at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
Associated Gain at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
Maximum Stable Gain1 at VCE = 3 V, IC = 20 mA, f = 2 GHz
dB
Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz
dB
Output Power at 1dB Compression Point at
VCE = 3 V, ICQ = 20 mA, f = 2 GHz
dBm
Output 3rd Order Intercept Point at VCE = 3 V, ICQ = 20 mA, f = 2 GHz dBm
Gain Bandwidth Product at VCE = 3 V, IC = 20 mA, f = 2 GHz
GHz
Reverse Transfer Capacitance2 at VCB = 2 V, IE = 0 mA, f = 1 GHz
pF
Collector Cutoff Current at VCB = 5V, IE = 0
nA
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
DC Current Gain3 at VCE = 2 V, IC = 5 mA
15.0
19.0
16.0
20
130
1.3
10.0
0.8 1.1
17.0
21.5
18.0
13
23
25
0.15 0.25
100
100
190 260
Notes:
1. MSG = S21
S12
2. Collector to base capacitance when the emitter pin is grounded.
3. Pulsed measurement, pulse width 350 μs, duty cycle 2 %.
California Eastern Laboratories

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