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PDF MA4E2514 Data sheet ( Hoja de datos )
| Número de pieza | MA4E2514 | |
| Descripción | SURMOUNT Low and Medium Barrier Silicon Schottky Diodes | |
| Fabricantes | Tyco Electronics | |
| Logotipo |  |
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SURMOUNTTM Low and Medium Barrier
Silicon Schottky Diodes: Tee Pair
V 2.00
www.DataSheet4U.com
Features
n Extremely Low Parasitic Capitance and Inductance
n Surface Mountable in Microwave Circuits, No
Wirebonds Required
n Rugged HMIC Construction with Polyimide Scratch
Protection
n Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300 °C, 16 hours)
n Lower Susceptibility to ESD Damage
Case Style 1116
A
B
Description
The MA4E2514 SurMountTM Diode Tee series are Silicon
Low, and Medium Barrier Schottky Devices fabricated with
the patented Heterolithic Microwave Integrated Circuit
(HMIC) process. HMIC circuits consist of Silicon pedestals
which form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, low loss microstrip
transmission medium. The combination of silicon and glass
allows HMIC devices to have excellent loss and power
dissipation characteristics in a low profile, reliable device.
The Surmount Schottky devices are excellent choices for
circuits requiring the small parasitics of a beam lead device
coupled with the superior mechanical performance of a chip.
The SurMount structure employs very low resistance silicon
vias to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip. These
devices are reliable, repeatable, and a lower cost performance
solution to conventional devices. They have lower
susceptibility to electrostatic discharge than conventional beam
lead Schottky diodes.
The multi-layer metalization employed in the fabrication of the
Surmount Schottky junctions includes a platinum diffusion
barrier, which permits all devices to be subjected to a 16-hour
non-operating stabilization bake at 300 °C.
The “ 0505 ” outline allows for Surface Mount placement and
multi-functional polarity orientations.
Applications
The MA4E2514 Family of SurMount Schottky diodes are
recommended for use in microwave circuits through Ku band
frequencies for lower power applications such as mixers,
sub-harmonic mixers, detectors and limiters. The HMIC
construction facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Surmount diode,
which can be connected to a hard or soft substrate circuit with
solder.
C
D ED
Dim
A
B
C
D Sq.
E
Inches
Min.
0.0445
Max.
0.0465
0.0445 0.0465
0.0040
0.0128
0.0128
0.0080
0.0148
0.0148
Millimeters
Min.
1.130
1.130
0.102
0.325
0.325
Max.
1.180
1.180
0.203
0.375
0.375
MA4E2514 Equivalent Circuit
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MA4E2514.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| MA4E2513-1289 | Silicon Schottky Diodes | Tyco Electronics |
| MA4E2514 | SURMOUNT Low and Medium Barrier Silicon Schottky Diodes | Tyco Electronics |
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