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PDF ESH05A15 Data sheet ( Hoja de datos )
| Número de pieza | ESH05A15 | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | Nihon Inter Electronics | |
| Logotipo |  |
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S B D T y p e : ESH05A15
FEATURES
*TO-251AA Case
*High Voltage Low leakage Current
*Low Forward Voltage Drop
*Low Power Loss,High Efficiency
*High Surge Capability
*Tj=150 °C operation
OULINE DRAWING
Maximum Ratings
Approx Net Weight: 0.35g
Rating
Symbol
ESH05A15
Unit
Repetitive Peak Reverse Voltage
VRRM
Average Rectified Output Current *1
IO
RMS Forward Current *1
IF(RMS)
Surge Forward Current *1
IFSM
Operating JunctionTemperature Range
Storage Temperature Range
Electrical
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Thermal
Characteristics
Tjw
Tstg
150
1.6 Ta=29°C *2 50 Hz half Sine Wave
5.0 Tc=125°C Resistive Load
7.85
130
50Hz Half Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
V
A
A
A
°C
°C
Characteristics
Symbol
Conditions
Min. Typ. Max. Unit
Peak Reverse Current
IRM
Peak Forward Voltage
VFM
Thermal Resistance
Junction to Ambient
Junction to Case
Rth(j-a)
Rth(j-c)
*1: Anode Terminals 1 and 3 Connected
*2: P.C. Board mounted, Print Land=20x20mm
Tj= 25°C, VRM= VRRM
Tj= 25°C, IFM= 5 A
P.C.Board Mounted *2
-
-
-
-
-
- 1 mA
- 0.88 V
- 80 °C /W
- 5 °C /W
1 page  
0° 180°
θ
CONDUCTION ANGLE
8 D.C.
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
V RM= 150V
ESH05A15/ESH05A15-F
6
RECT 180°
HALF SINE WAVE
RECT 120°
4
RECT 60°
2
0
0 25 50 75 100 125 150
CASE TEMPERATURE (°C)
0° 180°
θ
CONDUCTION ANGLE
4.0
AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE
P.C. Board mounted (Print land=20×20mm)
ESH05A15/ESH05A15-F
3.5
D.C.
3.0
2.5
2.0 RECT 180°.
RECT 120°.
1.5 RECT 60°.
HALF SINE WAVE.
1.0
0.5
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ESH05A15.PDF ] | |
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