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Número de pieza | APTM50DSKM65T3 | |
Descripción | MOSFET Power Module | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTM50DSKM65T3 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! APTM50DSKM65T3
Dual Buck chopper
MOSFET Power Module
VDSS = 500V
RDSon = 65mΩ max @ Tj = 25°C
ID = 51A @ Tc = 25°C
Q1
18
19
CR1
13 14
22 7
23 8
Q2
11
CR2
10
29 30
15
31
R1
32
16
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28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
2 34
78
14
13
10 11 12
Application
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single
buck of twice the current capability
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
500
51
38
204
±30
65
390
51
50
3000
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
1 page Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
1000
Ciss
Coss
100 Crss
10
0 10 20 30 40
VDS, Drain to Source Voltage (V)
50
APTM50DSKM65T3
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID= 25.5A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100 limited by RDSon
100 us
10 1 ms
10 ms
1
0.1
1
Single pulse
TJ=150°C
100 ms
10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
ID=51A
TJ=25°C
10
VDS=100V
VDS=250V
8 VDS=400V
6
4
2
0
0 25 50 75 100 125 150 175
Gate Charge (nC)
APT website – http://www.advancedpower.com
5–6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet APTM50DSKM65T3.PDF ] |
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APTM50DSKM65T3 | MOSFET Power Module | Advanced Power Technology |
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