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Número de pieza | APTM50DHM75T | |
Descripción | MOSFET Power Module | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTM50DHM75T (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! APTM50DHM75T
Asymmetrical - Bridge
MOSFET Power Module
VDSS = 500V
RDSon = 75mW max @ Tj = 25°C
ID = 46A @ Tc = 25°C
VBUS
Q1
CR3
G1
S1
O UT1
O UT2
Q4
CR2
0/VBUS SENSE
NT C1
0/V BU S
VBUS SENSE
G4
S4
NT C2
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VBUS
SENSE
VBUS
S1
G1
G4
S4
0/VBUS
0/VBUS
SENSE
OUT2
OUT1
NTC2
NTC1
Application
· Welding converters
· Switched Mode Power Supplies
· Switched Reluctance Motor Drives
Features
· Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Low profile
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
500
46
34
184
±30
75
357
46
50
2500
Unit
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
1 page Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
1000
100
Ciss
Coss
Crss
10
0 10 20 30 40
VDS, Drain to Source Voltage (V)
50
APTM50DHM75T
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID=23A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100
limited by RDSon
limited by RDSon
100µs
10
1
Single pulse
TJ=150°C
1ms
10ms
100ms
0.1
1 10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
ID=46A
TJ=25°C
VCE=100V
VCE=250V
10
8 VCE=400V
6
4
2
0
0 20 40 60 80 100 120 140 160
Gate Charge (nC)
APT website – http://www.advancedpower.com
5–6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet APTM50DHM75T.PDF ] |
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APTM50DHM75T | MOSFET Power Module | Advanced Power Technology |
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