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Número de pieza | APTM20UM05S | |
Descripción | MOSFET Power Module | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTM20UM05S (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! APTM20UM05S
Single switch
Series & parallel diodes
MOSFET Power Module
VDSS = 200V
RDSon = 5mΩ max @ Tj = 25°C
ID = 317A @ Tc = 25°C
SK CR1
Application
D · Motor control
· Switched Mode Power Supplies
S · Uninterruptible Power Supplies
Q1 Features
· Power MOS 7® MOSFETs
G - Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Low stray inductance
- M6 power connectors
- M4 signal connectors
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· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
200
317
237
1268
±30
5
1136
89
50
2500
Unit
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-7
1 page APTM20UM05S
Typical Performance Curve
0.12
0.1
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.08 0.7
0.06
0.5
0.04 0.3
0.02
0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
1000
800
Low Voltage Output Characteristics
VGS=15&10V 9V
600 7.5V
7V
400
6.5V
200 6V
5.5V
0
0 5 10 15 20 25
VDS, Drain to Source Voltage (V)
Transfert Characteristics
800
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
600
400
200
0
2
TJ=25°C
TJ=125°C
TJ=-55°C
3456789
VGS, Gate to Source Voltage (V)
1.2
1.15
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 158.5A
1.1
1.05
VGS=10V
1
0.95
VGS=20V
0.9
0
100 200 300 400
ID, Drain Current (A)
DC Drain Current vs Case Temperature
320
280
240
200
160
120
80
40
0
25 50 75 100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
5-7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet APTM20UM05S.PDF ] |
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APTM20UM05S | MOSFET Power Module | Advanced Power Technology |
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