|
|
PDF APTM20DAM08TG Data sheet ( Hoja de datos )
| Número de pieza | APTM20DAM08TG | |
| Descripción | MOSFET Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de APTM20DAM08TG (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
APTM20DAM08TG
Boost chopper
MOSFET Power Module
VDSS = 200V
RDSon = 8mΩ typ @ Tj = 25°C
ID = 208A @ Tc = 25°C
VBUS SENSE
VBUS
NT C2
CR1
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
www.DataSheet4U.com
Q2
G2
S2
0/VBU S
O UT
NT C1
VB US
VB US
SE NSE
G2
S2
0/ VB US
S2
G2
OUT
OUT
NTC2
NTC1
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc= 25°C
Tc = 80°C
Tc = 25°C
Max ratings
200
208
155
832
±30
10
781
100
50
3000
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
1 page  
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
Coss
1000
Crss
100
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM20DAM08TG
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID= 104A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
100
Maximum Safe Operating Area
limited by
RDS on
100µs
1ms
10 10ms
Single pulse
TJ=150°C
1
100ms
1 10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
ID=208A
12 TJ=25°C
10
VDS=40V
VDS=100V
8 VDS=160V
6
4
2
0
0 40 80 120 160 200 240 280 320
Gate Charge (nC)
APT website – http://www.advancedpower.com
5–6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTM20DAM08TG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| APTM20DAM08TG | MOSFET Power Module | Advanced Power Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |