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PDF APTM10HM05F Data sheet ( Hoja de datos )
| Número de pieza | APTM10HM05F | |
| Descripción | MOSFET Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APTM10HM05F (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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APTM10HM05F
Full - Bridge
MOSFET Power Module
VDSS = 100V
RDSon = 4.5mΩ typ @ Tj = 25°C
ID = 278A @ Tc = 25°C
Q1
G1
S1
Q2
G2
S2
www.DataSheet4U.com
G1 VBUS
S1
S3
G3
VBUS
Q3
Q4
0/VBUS
O UT 1
0/VBUS
O UT 2
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
G3 • Motor control
S3
Features
• Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
G4 - Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
S4 - Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
G2 Benefits
S2 • Outstanding performance at high frequency operation
S4 • Direct mounting to heatsink (isolated package)
G4 • Low junction to case thermal resistance
• Low profile
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
100
278
207
1100
±30
5
780
100
50
3000
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
1 page  
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
Coss
Crss
1000
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM10HM05F
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID= 125A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
limited by
RDSon
100µs
100 1ms
Single pulse
TJ=150°C
10
10ms
1 10 100
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
ID=250A
14 TJ=25°C
VDS=20V
12
10 VDS=50V
8 VDS=80V
6
4
2
0
0 200 400 600 800 1000
Gate Charge (nC)
APT website – http://www.advancedpower.com
5-6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTM10HM05F.PDF ] | |
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