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PDF APTM10DHM09T Data sheet ( Hoja de datos )
| Número de pieza | APTM10DHM09T | |
| Descripción | MOSFET Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APTM10DHM09T (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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APTM10DHM09T
Asymmetrical - Bridge
MOSFET Power Module
VDSS = 100V
RDSon = 9mΩ typ @ Tj = 25°C
ID = 139A @ Tc = 25°C
VBUS
Q1
CR3
G1
S1 OUT1 OUT2
Q4
CR2
0/VBUS SENSE
NTC1
0/VBUS
VBUS SENSE
G4
S4
NT C2
www.DataSheet4U.com
VBUS
SENSE
VB US
S1
G1
G4
S4
0/VBUS
0/VBUS
SENSE
OUT2
OUT1
NTC2
NTC1
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Features
• Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
100
139
100
430
±30
9.5
390
100
50
3000
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
1 page  
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
1000
Ciss
Coss
Crss
100
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM10DHM09T
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID= 69.5A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100
limited by
RDS on
100µs
1ms
10 10ms
Single pulse
TJ=150°C
1
1 10 100
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
ID=139A
14 TJ=25°C
VDS=20V
12
10 VDS=50V
8 VDS=80V
6
4
2
0
0 100 200 300 400 500
Gate Charge (nC)
APT website – http://www.advancedpower.com
5–6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTM10DHM09T.PDF ] | |
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