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PDF MSC81325M Data sheet ( Hoja de datos )
| Número de pieza | MSC81325M | |
| Descripción | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS | |
| Fabricantes | STMicroelectronics | |
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MSC81325M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION
EMITTER BALLASTED
RUGGEDIZED VSWR ∞:1
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 325 W MIN. WITH 6.7 dB GAIN
PRELIMINARY DATA
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE
MSC81325M
BRANDING
81325M
www.DataSheet4U.com
DESCRIPTION
The MSC81325M device is a high power pulsed
transistor specifically designed for DME/TACAN
avionics applications.
This device is capable of withstanding an infinite
load VSWR at any phase angle under full rated
conditions. Low RF thermal resistance and semi-
automatic bonding techniques ensure high relia-
bility and product consistency.
The MSC81325M is housed in the industry-stand-
ard AMPAC™ metal/ceramic hermetic package
with internal input/output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
PDISS
IC
VCC
TJ
TSTG
Parameter
Power Dissipation* (TC ≤ 100˚C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
880
24
55
250
− 65 to +200
Unit
W
A
V
°C
°C
0.17 °C/W
October 1992
1/3
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MSC81325M.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| MSC81325M | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS | STMicroelectronics |
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