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PDF MRFE6S9130HR3 Data sheet ( Hoja de datos )
| Número de pieza | MRFE6S9130HR3 | |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
•
Typical Single - Carrier N - CDMA Performance @ 880 MHz:
I(DPQilo=t,
9S5y0ncm,AP,aPgoinutg=, T2r7afWficaCttsodAevsg.8,
Full Frequency Band,
Through 13) Channel
IVSD-D95=C2D8MVoAlts,
Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.2 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9130H
Rev. 0, 4/2007
MRFE6S9130HR3
MRFE6S9130HSR3
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRFE6S9130HR3
www.DataSheet4U.com
CASE 465A - 06, STYLE 1
NI - 780S
MRFE6S9130HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +66
- 0.5, +12
- 65 to +150
150
200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 130 W CW
Case Temperature 75°C, 27 W CW
RθJC
0.45
0.51
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9130HR3 MRFE6S9130HSR3
1
1 page  
TYPICAL CHARACTERISTICS
20 34
ηD
19.5 32
19 Gps
18.5
18
17.5
VDD = 28 Vdc, Pout = 27 W (Avg.), IDQ = 950 mA
N−CDMA IS−95 Pilot, Sync, Paging, Traffic
Codes 8 Through 13
30
28
26
− 20
−5
17
16.5 ACPR
16
ALT1
15.5
IRL
−30 −15
−40 −25
−50 −35
−60 −45
15 −70
820 840 860 880 900 920 940 960 980
− 55
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg.
19
18.5 Gps
18 ηD
17.5
17 VDD = 28 Vdc, Pout = 54 W (Avg.)
16.5 IDQ = 950 mA, N−CDMA IS−95 Pilot, Sync
16 Paging, Traffic Codes 8 Through 13
15.5
15 IRL
14.5 ACPR
14
13.5 ALT1
13
820 840 860 880 900 920 940 960
50
47
44
41
38
35
− 10
− 20
− 30
− 40
− 50
− 60
− 70
980
0
−5
− 10
− 15
− 20
− 25
− 30
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 54 Watts Avg.
21
IDQ = 1400 mA
20
1100 mA
19
950 mA
18
700 mA
17
500 mA
16 VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
15
1 10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
400
− 10
VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
− 20
IDQ = 500 mA
− 30
700 mA
1400 mA
− 40
−50 1100 mA
950 mA
− 60
1 10 100 400
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRFE6S9130HR3 MRFE6S9130HSR3
5
5 Page 
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© Freescale Semiconductor, Inc. 2007. All rights reserved.
RDFocDumevenict eNuDmabetar: MRFE6S9130H
FRreeve. s0,c4a/2le007Semiconductor
MRFE6S9130HR3 MRFE6S9130HSR3
11
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