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PDF MGF4961B Data sheet ( Hoja de datos )
| Número de pieza | MGF4961B | |
| Descripción | SUPER LOW NOISE InGaAs HEMT | |
| Fabricantes | Mitsubishi Electric | |
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Feb./2007
DESCRIPTION
The MGF4961B super-low noise HEMT (High Electron Mobility
Transistor) is designed for use in K band amplifiers.
FEATURES
Low noise figure
@ f=20GHz
NFmin. = 0.7dB (Typ.)
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4961B
SUPER LOW NOISE InGaAs HEMT
Outline Drawing
(1.05)
4.0±0.2
1.9±0.1
(1.05)
①
(unit: mm)
High associated gain @ f=20GHz
Gs = 13.5dB (Typ.)
APPLICATION
C to K band low noise amplifiers
②②
0.5±0.1
③
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
GD-31
MITSUBISHI Proprietary
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
① Gate
② Source
③ Drain
Tape & reel 4000pcs./reel
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature
(Ta=25°C )
Ratings
-4
-4
IDSS
50
125
-55 to +125
Unit
V
V
mA
mW
°C
°C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
Synbol
Parameter
V(BR)GDO
IGSS
IDSS
VGS(off)
Gs
NFmin.
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Associated gain
Minimum noise figure
(Ta=25°C )
Test conditions
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,ID=10mA
f=20GHz
MIN.
-3
--
15
-0.1
11.5
--
Limits
TYP.
--
--
--
--
13.5
0.70
MAX
--
50
60
-1.5
--
0.95
Unit
V
µA
mA
V
dB
dB
MITSUBISHI
(1/4)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MGF4961B.PDF ] | |
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