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PDF APTC80A10SCT Data sheet ( Hoja de datos )
| Número de pieza | APTC80A10SCT | |
| Descripción | Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APTC80A10SCT (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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APTC80A10SCT
Phase leg
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
VBUS
NT C2
VDSS = 800V
RDSon = 100mW max @ Tj = 25°C
ID = 42A @ Tc = 25°C
Application
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Q1
G1
S1
Q2
O UT
Features
·
-
-
-
-
Ultra low RDSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
· Parallel SiC Schottky Diode
G2 - Zero reverse recovery
- Zero forward recovery
0/VBU S
S2
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
NT C1
· Kelvin source for easy drive
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· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
OUT · High level of integration
VBUS
Benefits
0/VBUS
OUT
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
S1 S2 NTC2
G1 G2 NTC1
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
Absolute maximum ratings
· Low profile
Symbol
Parameter
Max ratings
Unit
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
Tc = 25°C
Tc = 80°C
800
42
32
V
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
172
±30 V
100 mW
PD Maximum Power Dissipation
Tc = 25°C
416
W
IAR Avalanche current (repetitive and non repetitive)
24 A
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
0.5
670
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–7
1 page  
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-50 0 50 100
TJ, Junction Temperature (°C)
150
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50
0 50 100 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
1000
100
Ciss
Coss
Crss
10
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTC80A10SCT
ON resistance vs Temperature
3.0
VGS=10V
2.5 ID= 21A
2.0
1.5
1.0
0.5
0.0
-50
0
50 100 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100 limited by
RDSon
100µs
10 1ms
1 Single pulse
TJ=150°C
10ms
100ms
0
1 10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
14
ID=42A
TJ=25°C
12
10
VDS=160V
VDS=400V
8
6 VDS=640V
4
2
0
0 50 100 150 200 250 300
Gate Charge (nC)
APT website – http://www.advancedpower.com
5–7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet APTC80A10SCT.PDF ] | |
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