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Número de pieza | 1N5821-G | |
Descripción | (1N5820-G - 1N5822-G) Schottky Barrier Rectifier | |
Fabricantes | Comchip Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1N5821-G (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Schottky Barrier Rectifier
1N5820-G Thru. 1N5822-G
Forward Current: 3.0A
Reverse Voltage: 20 to 40V
RoHS Device
SMD Diodes Specialist
Features
-Fast switching.
-Low forward voltage, high current capability.
-Low power loss, high efficiency.
-High current surge capability.
-High temperature soldering guaranteed: 250OC/10
seconds, 0.375”(9.5mm) lead length at 5lbs.
(2.3kg) tension.
Mechanical data
www.DataSheet4U.com
-Case: Transfer molded plastic
-Epoxy: UL94V-0 rate flame retardant
-Polarity: Color band denotes cathode end
-Lead: Plated axial lead, solderable per MIL-STD-
202E method 208C
Mounting position: Any
-Weight: 0.042 ounces, 1.19gram
DO-27
1.0(25.4)
MIN.
0.052(1.3)
0.048(1.2)
0.375(9.5)
0.335(8.5)
1.0(25.4)
MIN.
0.220(5.6)
0.197(5.0)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Symbol
1N5820-G
1N5821-G
Maximum repetitive peak reverse voltage
VRRM
20
30
Maximum RMS voltage
VRMS
14
21
Maximum DC blocking voltage
VDC 20
30
Maximum average forward rectified current
0.375"(9.5mm) lead length @TL=95OC
I ( AV)
3.0
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
80
Maximum forward voltage at
3.0A
9.4A
VF
0.475
0.850
0.500
0.900
Maximum reverse current
TA=25OC
at rated DC blocking voltage*1 TA=100OC
IR
2.0
20
Typical junction capacitance *2
CJ
250
Typical thermal resistance *3
RθJA
40
Operating temperature range
TJ
-55 to +125
Storage temperature range
TSTG
-55 to +125
NOTES:
1. Pulse test: 300μs pulse width, 1% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0Volts.
2. Thermal resistance from junction to ambient, P.C.B. Mounted with 0.375"(9.5mm) lead length
with 2.5”×2.5”(63.5×63.5mm) copper pads.
1N5822-G
40
28
40
0.525
0.950
Unit
V
V
V
A
A
V
mA
pF
OC/W
OC
OC
QW-BB016
REV:A
Page 1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 1N5821-G.PDF ] |
Número de pieza | Descripción | Fabricantes |
1N5821-G | (1N5820-G - 1N5822-G) Schottky Barrier Rectifier | Comchip Technology |
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1N5821-TB | 3.0A SCHOTTKY BARRIER RECTIFIER | Won-Top Electronics |
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