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PDF FXT705 Data sheet ( Hoja de datos )
| Número de pieza | FXT705 | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FXT705 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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PNP SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 FEB 94
FEATURES
* 120 Volt VCEO
* Gain of 3K at IC=1 Amp
* Ptot= 1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
* Replacement of TO126 and TO220 darlingtons
REFER TO ZTX705 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
FXT705
B
C
E
E-Line
TO92 Compatible
VALUE
-140
-120
-10
-4
-1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-140
V IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-120
V IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-10
V IE=-100µA, IC=0
Collector Cut-Off
Current
ICBO
-0.1 µA
-10 µA
VCB=-120V, IE=0
VCB=-120V, Tamb=100°C
Collector Cut-Off
Current
ICES
-10 µA VCES=-80V
Emitter Cut-Off
Current
IEBO
-0.1 µA VEB=-8V
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
-1.3 V
-2.5 V
-1.8 V
IC=-1A, IB=-1mA*
IC=-2A, IB=-2mA*
IC=-1A, IB=-10mA*
Base-Emitter Turn-On VBE(on)
Voltage
-1.7 V
IC=-1A, VCE=-5V*
Static Forward
hFE
Current Transfer Ratio
Transition
Frequency
fT
3k IC=-10mA, VCE=-5V*
3k IC=-100mA, VCE=-5V*
3k 30k IC=-1A, VCE=-5V*
2k IC=-2A, VCE=-5V*
160 MHz IC=-100mA, VCE=-10V
f=20MHz
3-55
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet FXT705.PDF ] | |
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