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PDF BSR40 Data sheet ( Hoja de datos )
| Número de pieza | BSR40 | |
| Descripción | (BSR40 / BSR42) SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSR40 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996 7
BSR40
BSR42
COMPLEMENTARY TYPES – BSR40 – BSR30
BSR42 – BSR32
C
PARTMARKING DETAIL –
BSR40 – AR1
BSR42 – AR3
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
BSR40
BSR42
UNIT
Collector-Base Voltage
VCBO
70 90
V
Collector-Emitter Voltage
VCEO
60 80
V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM 2 A
Continuous Collector Current
IC
1A
Base Current
IB 100 mA
Power Dissipation at Tamb=25°C
Ptot
1W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
BSR40
Breakdown Voltage BSR42
Collector-Emitter BSR40
Breakdown Voltage BSR42
Emitter-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
70
90
60
80
5
V IC=100µA
V IC=100µA
V IC=10mA
V IC=10mA
V IE=10µA
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
Collector Capacitance
Emitter Capacitence
Transition Frequency
ICBO
VCE(sat)
VBE(sat)
hFE
Cc
Ce
fT
10
40
30
100
100
50
0.25
0.5
1.0
1.2
120
12
90
nA
µA
V
V
V
V
pF
pF
MHz
VCB=60V
VCB=60V, Tamb=125°C
IC =150mA, IB=15mA
IC =500mA, IB=50mA
IC =150mA, IB=15mA
IC =500mA, IB=50mA
IC =100µA, VCE=5V
IC =100mA, VCE=5V
IC =500mA, VCE=5V
VCB =10V, f =1MHz
VEB =0.5V, f=1MHz
IC=50mA, VCE=10V
f =35MHz
Turn-On Time
Turn-Off Time
Ton
Toff
250
1000
ns
ns
VCC =20V, IC =100mA
IB1 =-IB2 =-5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT493 datasheet.
3 - 67
1 page | ||
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| PDF Descargar | [ Datasheet BSR40.PDF ] | |
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