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PDF STW9N150 Data sheet ( Hoja de datos )

Número de pieza STW9N150
Descripción N-channel MOSFET
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STW9N150 Hoja de datos, Descripción, Manual

STW9N150
N-channel 1500V - 2.2- 8A - TO-247
Very high voltage PowerMESH™ Power MOSFET
TARGET SPECIFICATION
General features
Type
STW9N150
VDSS
1500V
RDS(on)
< 2.7
100% avalanche tested
Avalanche ruggedness
Gate charge minimized
Very low intrinsic capacitances
High speed switching
Very low on-resistance
ID Pw
8A 350W
Description
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Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics.
Applications
Switching application
TO-247
Internal schematic diagram
Order code
Part number
STW9N150
Marking
W9N150V
Package
TO-247
Packaging
Tube
May 2007
Rev 1
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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STW9N150 pdf
STW9N150
3 Test circuits
Test circuits
Figure 1. Switching times test circuit for
resistive load
Figure 2. Gate charge test circuit
Figure 3. Test circuit for inductive load
Figure 4. Unclamped Inductive load test
switching and diode recovery times
circuit
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Figure 5. Unclamped inductive waveform
Figure 6. Switching time waveform
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