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PDF APT75GP120B2 Data sheet ( Hoja de datos )
| Número de pieza | APT75GP120B2 | |
| Descripción | POWER MOS 7 IGBT | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APT75GP120B2
1200V
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 100 kHz operation @ 800V, 20A
• 50 kHz operation @ 800V, 38A
• RBSOA rated
T-MaxTM
G
C
E
G
C
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT75GP120B2
UNIT
www.DataSheet4U.com
VCES
VGE
VGEM
I C1
I C2
I CM
RBSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C 7
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 25°C
Reverse Bias Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±20
±30
100
91
300
300A @ 960V
1042
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1000µA)
1200
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 2.5mA, Tj = 25°C)
3 4.5 6
VCE(ON)
I CES
Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
3.3 3.9
3.0
1000
5000
IGES Gate-Emitter Leakage Current (VGE = ±20V)
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
µA
nA
1 page  
TYPICAL PERFORMANCE CURVES
20,000
10,000
Cies
1,000
500
100
50
Coes
Cres
10
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT75GP120B2
350
300
250
200
150
100
50
0
0 100 200 300 400 500 600 700 800 900 1000
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
10-5
0.9
0.7
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Junction
temp (°C)
RC MODEL
0.00792
0.00354F
Power
(watts)
0.0475
0.0307F
Case temperature (°C)
0.0656
0.361F
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
140
100
50
10
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 800V
RG = 5 Ω
.3
10 30 50 70 90 110 130 150
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
Fmax = min(fmax1, fmax 2 )
f max 1
=
t d ( on )
+
0.05
t r + t d(off )
+
tf
fmax 2
=
Pdiss − Pcond
Eon 2 + Eoff
Pdiss
=
TJ − TC
R θJC
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APT75GP120B2.PDF ] | |
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