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PDF 2SD882D Data sheet ( Hoja de datos )

Número de pieza 2SD882D
Descripción TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SD882D
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 1W audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
www.DataSheet4CUo.collmector Current(Pulse)
Base Current(DC)
Total Power Dissipation(TC=25oC)
Total Power Dissipation(TA=25oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IC
IB
PD
PD
TJ
TSTG
Rating
40
30
5
3
7
0.6
10
1
+150
-55 to +150
Unit
V
V
V
A
A
A
W
W
oC
oC
TO-126ML
.163(4.12)
.153(3.87)
.044(1.12)
.034(0.87)
.146(3.70)
.136(3.44)
.148(3.75)
.138(3.50)
.060(1.52)
.050(1.27)
.300(7.62)
.290(7.37)
123
.084(2.12)
.074(1.87)
.591(15.0)
.551(14.0)
.180
(4.56)
Typ
.056(1.42)
.046(1.17)
.033(0.84)
.027(0.68)
.090
(2.28)
Typ
.123(3.12)
.113(2.87)
.084(2.14)
.074(1.88)
.027(0.69)
.017(0.43)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO
40
-
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
BVCEO
BVEBO
ICBO
30
5
-
-
-
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
VBE(sat)
-
-
-
-
0.3
1
DC Current Gain(1)
hFE1
hFE2
30
100
150
200
Transition Frequency
fT -
90
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
45
Classification of hFE2
Rank
Q
P
E
Range
100~200
160~320
250~500
Max Unit
Test Conditions
- V IC=100µA
- V IC=1mA
- V IE=10µA
1 µA VCB=30V
1 µA VEB=3V
0.5 V IC=2A, IB=0.2A
2 V IC=2A, IB=0.2A
- - IC=20mA, VCE=2V
500 - IC=1A, VCE=2V
- MHz IC=0.1A, VCE=5V
- pF IE=0, VCB=10V, f=1MHz

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