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PDF 2SD882 Data sheet ( Hoja de datos )
| Número de pieza | 2SD882 | |
| Descripción | NPN SILICON POWER TRANSISTOR | |
| Fabricantes | NEC | |
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 1. NPN ( Datasheet PDF )  Hay una vista previa y un enlace de descarga de 2SD882 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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DATA SHEET
NPN SILICON POWER TRANSISTOR
2SD882
NPN SILICON POWER TRANSISTOR
DESCRIPTION
The 2SD882 is NPN silicon transistor suited for the output stage of 3
watts audio amplifier, voltage regulator, DC-DC converter and relay
driver.
FEATURES
• Low saturation voltage
VCE(sat) = 0.5 V MAX. (IC = −2 A, IB = 0.2 A)
• Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = 2 V, IC = 1 A)
• Less cramping space required due to small and thin package and
reducing the trouble for attachment to a radiator.
No insulator bushing required.
PACKAGE DRAWING (Unit: mm)
8.5 MAX.
3.2 ±0.2
2.8 MAX.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
Junction Temperature
Maximum Power Dissipations
−55 to +150°C
150°C Maximum
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Maximum Voltages and Currents (TA = 25°C)
VCBO
Collector to Base Voltage
VCEO
Collector to Emitter Voltage
VEBO
Emitter to Base Voltage
IC(DC)
Collector Current (DC)
IC(pulse)Note Collector Current (pulse)
Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2%
1.0 W
10 W
40 V
30 V
5.0 V
3.0 A
7.0 A
12 TYP.
0.55
+0.08
–0.05
0.8
+0.08
–0.05
2.3 TYP.
2.3 TYP.
1.2 TYP.
1: Emitter
2: Collector: connected to mounting plane
3: Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
DC Current Gain
hFE1
VCE = 2.0 V, IC = 20 mANote
DC Current Gain
hFE2
VCE = 2.0 V, IC = 1.0 ANote
Gain Bandwidth Product
fT VCE = 5.0 V, IC = 0.1 A
Output Capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Collector Cutoff Current
ICBO VCB = 30 V, IE = 0 A
Emitter Cutoff Current
IEBO VEB = 3.0 V, IC = 0 A
Collector Saturation Voltage
VCE(sat)
IC = 2.0 A, IB = 0.2 ANote
Base Saturation Voltage
VBE(sat)
IC = 2.0 A, IB = 0.2 ANote
Note Pulse Test: PW ≤ 350 µs, Duty Cycle ≤ 2%
MIN.
30
60
TYP.
150
160
90
45
0.3
1.0
MAX.
400
1.0
1.0
0.5
2.0
UNIT
MHz
pF
µA
µA
V
V
CLASSIFICATION OF hFE
Rank
Range
R
60 to 120
Q
100 to 200
P
160 to 320
Remark Test Conditions: VCE = 2.0 V, IC = 1.0 A
E
200 to 400
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17116EJ2V0DS00 (2nd edition)
(Previous No. TC-3564)
Date Published March 2004 N CP(K)
Printed in Japan
The mark shows major revised points.
c
2004
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD882.PDF ] | |
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