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PDF PIP3102-R Data sheet ( Hoja de datos )

Número de pieza PIP3102-R
Descripción LOGIC LEVEL TOPFET
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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Philips Semiconductors
Logic level TOPFET
Product Specification
PIP3102-R
DESCRIPTION
Monolithic logic level protected
power MOSFET using TOPFET2
technology assembled in a 5 pin
surface mounting plastic package.
APPLICATIONS
General purpose switch for driving
lamps
motors
solenoids
heaters
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
SYMBOL
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
PARAMETER
VPS Protection supply voltage
MAX.
50
30
90
150
28
NOM.
5
UNIT
V
A
W
˚C
m
UNIT
V
FEATURES
TrenchMOS output stage with
low on-state resistance
Separate input pin for higher
frequency drive
5 V logic compatible input
Separate supply pin for logic
andwww.DataSheet4U.com protection circuits with low
operating current
Overtemperature protection
Drain current limiting
Short circuit load protection
Latched overload trip state reset
by the protection pin
Diagnostic flag pin indicates
protection supply connected,
overtemperature condition,overload
tripped state, or open circuit load
(detected in the off-state)
ESD protection on all pins
Overvoltage clamping
FUNCTIONAL BLOCK DIAGRAM
PROTECTION SUPPLY
FLAG
INPUT
OC LOAD
DETECT
O/V
CLAMP
RIG
LOGIC AND
PROTECTION
DRAIN
POWER
MOSFET
SOURCE
PINNING - SOT426
PIN DESCRIPTION
1 input
2 flag
3 (connected to mb)
4 protection supply
5 source
mb drain
Fig.1. Elements of the TOPFET.
PIN CONFIGURATION
SYMBOL
mb
3
12 45
Fig. 2.
TOPFET
P
FP
I
D
S
Fig. 3.
October 2002
1
Rev 1.000

1 page




PIP3102-R pdf
Philips Semiconductors
Logic level TOPFET
Product Specification
PIP3102-R
TRUTH TABLE
For normal, open-circuit load and overload conditions or inadequate protection supply voltage.
Assumes proper external pull-up for flag pin. Refer to FLAG CHARACTERISTICS.
CONDITION
PROTECTION
INPUT
FLAG
Normal on-state
1 10
OUTPUT
ON
Normal off-state
1 0 0 OFF
Open circuit load
1 1 0 ON
Open circuit load
1 0 1 OFF
Short circuit load1
1 1 1 OFF
Over temperature
1 X 1 OFF
Low protection supply voltage
0 1 1 ON
Low protection supply voltage
0
KEY ‘0’ equals low
‘1’ equals high
‘X’ equals don’t care.
0
1 OFF
FLAG CHARACTERISTICS
The flag is an open drain transistor which requires an external pull-up circuit.
Limits are for -40˚C Tmb 150˚C; typicals are for Tmb = 25˚C.
SYMBOL PARAMETER
CONDITIONS
Flag ‘low’
VFSF Flag voltage
IFSF Flag saturation current
Flag ‘high’
normal operation; VPS = 5 V
IF = 100 µA
VFS = 5 V
overload or fault
IFSO
V(CL)FS
Flag leakage current
Flag clamping voltage
Application information
VFS = 5 V
IF = 100 µA
RF
Suitable external pull-up
VFF = 5 V
resistance
MIN. TYP. MAX. UNIT
- 0.8 1
V
- 10 - mA
- 0.1 10 µA
5.5 6.2 8.5 V
- 47 - k
SWITCHING CHARACTERISTICS
Tmb = 25˚C; RI = 50 ; RIS = 50 ; VDD = 15 V; resistive load RL = 10 .
SYMBOL PARAMETER
CONDITIONS
td on Turn-on delay time
tr Rise time
td off Turn-off delay time
tf Fall time
VIS: 0 V 5 V
VIS: 5 V 0 V
MIN.
-
-
-
-
TYP.
1.8
3.5
11
5
MAX.
5
8
30
12
UNIT
µs
µs
µs
µs
1 In this condition the protection circuit is latched. To reset the latch the protection pin must be taken low. Refer to PROTECTION SUPPLY
CHARACTERISTICS.
October 2002
5
Rev 1.000

5 Page





PIP3102-R arduino
Philips Semiconductors
Logic level TOPFET
Product Specification
PIP3102-R
ID / A
80
70
60
max.
50
40 typ.
30
20 min.
10
0
-50
0 50 100 150
Tj / OC
Fig.32. Typical overload current, VDS = 5 V.
ID = f(Tj); conditions: VIS = 5 V; VPS = 4 V; tp = 300 µs
IS / A
15
10
5
0
0 0.5 1
VSD / V
Fig.33. Typical reverse diode current, Tj = 25 ˚C.
IS = f(VSDS); conditions: VIS = 0 V; tp = 300 µs
Capacitance / pF
10000
1000
Ciss
Coss
100
Crss
10
0 10 20 VDS / V 30 40 50
Fig.34. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VIS = 0 V; f = 1 MHz
Zth / ( K / W )
1E+01
0.5 1E+00
0.2
0.1
0.05
0.02
PD
tp
D = tp
1E-01
T
1E-02
0T
1E-03
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
t/s
Fig.35. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
October 2002
11
Rev 1.000

11 Page







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